DIELECTRIC MATERIAL

PURPOSE:To make a dielectric material keeping a relative dielectric constant for a practical range and having an extremely low dielectric loss characteristic in a microwave band by a method wherein individual elements forming a composition expressed by Ba(Mg1/3Ta2/3)O3 and Zr constitute a composite perovskite- based crystal structure after they have been mutually melted and solidified. CONSTITUTION:Attention is paid to A(B'1/3B''2/3)O3-based materials (where A is a bivalent ion, B' is a bivalent ion and B'' is a pentavalent ion) constituting a composite perovskite-based crystal structure; out of the materials, a dielectric material constituting a composite perovskite-based crystal material whose dielectric loss is extremely small and where individual elements forming a composition expressed by Ba(Mg1/3Ta2/3)O3 and Zr have been mutually melted and solidified is made. An amount of a solidified Zr ion is not limited especially; however, an amount which can smoothly eliminate a superlattice structure is desirable. When the amount of the Zr ion exceeds about 30mol% with reference to amount of an Mg ion and a Ta ion, a degree of an increase in a Q value tends to become small; when the amount of the Zr ion is less than about 0.5mol%, an effect by the Zr ion is not displayed.