SEMICONDUCTOR MEMORY DEVICE

PURPOSE:To obtain a memory cell with a small possessing area by constituting a logic circuit to detect the consistency and inconsistency of data with two MOS transistors (TR). CONSTITUTION:The gate terminals of two MOS TRs 111 and 112 to detect the consistency and inconsistency of the two storing node data are connected at 1:1, the drain terminals of the MOS TRs 111 and 112 are respectively connected to a common sense line 113, and source terminals are respectively connected to a pair of bit lines 101 and 102. Further, the threshold voltage of the two MOS TRs 111 and 112 are set larger than the value of the threshold voltage of other MOS TRs 105-110 consisting of a memory cell 115. Thus, the memory cell with the fewer composing elements and with the small occupying area can be obtained.