SEMICONDUCTOR DEVICE

PURPOSE:To prevent the stress and electromigration of an aluminum pattern by forming two layer structure, in which an Al-Si layer is shaped onto an Al-Si-Cu layer, as electrode structure. CONSTITUTION:Electrode structure in which an aluminum alloy layer 2 containing copper and an aluminum alloy laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	UEDA YASUSHI, ASAHI KUNIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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