SEMICONDUCTOR DEVICE

PURPOSE:To prevent the stress and electromigration of an aluminum pattern by forming two layer structure, in which an Al-Si layer is shaped onto an Al-Si-Cu layer, as electrode structure. CONSTITUTION:Electrode structure in which an aluminum alloy layer 2 containing copper and an aluminum alloy layer 7, from which copper is removed, on the layer 2 are laminated is shaped. Consequently, a reaction with Cu of a chloride formed at the time of aluminum dry etching is prevented by the Al-Si layer 7 on the surface side and a passivation film by an organic polymer 4 shaped onto the sidewall of said electrode layer pattern. That is, a reaction with moisture which has been at issue is removed completely. Accordingly, a wiring, which is not corroded and also resists stress and electromigration, can be realized.