SEMICONDUCTOR LASER DEVICE

PURPOSE:To prevent end face breakages which take place in operation under a high output, by introducing p-type highly concentrated impurities which are contained in a p type optical waveguide layer as well as in the third clad layer, in an n type active layer as well as the first clad layer facing to a striped opening which is installed for the constriction currents. CONSTITUTION:After causing the first n-conductivity type clad layer 11, an active layer 12, and the second n-conductivity type clad layer 13 to be continuously deposited to grow, a striped opening 32 is formed at the second n-conductivity type clad layer located at the highest layer. After that, the striped opening 32 is formed at the second n-conductivity type clad layer 13 by an etching process reaching a position adjacent to the surface of the active layer 12 and this device allows end parts of the second layer 13, that is, remaining parts 33 to be thicker than other parts. Then an optical waveguide part 14, a coating layer 15, and the third clad layer 16 which functions as a contact layer are provided at the remaining parts 33 and the striped opening 32 by introducing p-type impurities. As a result, the active layer is divided into two layers: a diffusion layer 19 for laser and the n type optical active layer 12 which is formed in advance and then, the diffusion layer 19 becomes transparent and further, the end parts of the active layer 12 function as apertures of this laser device.