JP2978731B

A data output buffer for a semiconductor memory device having a plurality of memory cells, each of the memory cells storing a data signal. The data output buffer comprises: an input line for inputting the data signal from each of the memory cells; a pull-up driver connected between a supply voltage...

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description A data output buffer for a semiconductor memory device having a plurality of memory cells, each of the memory cells storing a data signal. The data output buffer comprises: an input line for inputting the data signal from each of the memory cells; a pull-up driver connected between a supply voltage source and an output line, the pull-up driver being driven in response to a first logic of the data signal from the input line; a pull-down driver connected between a ground voltage source and the output line, the pull-down driver being driven complementarily to the pull-up driver in response to a second logic of the data signal from the input line; at least one auxiliary pull-up driver connected in parallel to the pull-up driver; and a controller for driving the at least one auxiliary pull-up driver for a predetermined time period from a start portion of the first logic of the data signal from the input line. With this construction, the data output buffer can enhance a response characteristic of an output signal with respect to the input data signal to enhance the data access speed of the semiconductor memory device.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2978731BB2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2978731BB2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2978731BB23</originalsourceid><addsrcrecordid>eNrjZODyCjCyNLcwNzZ04mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACt3G4g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>JP2978731B</title><source>esp@cenet</source><creator>BOKU KIU</creator><creatorcontrib>BOKU KIU</creatorcontrib><description>A data output buffer for a semiconductor memory device having a plurality of memory cells, each of the memory cells storing a data signal. The data output buffer comprises: an input line for inputting the data signal from each of the memory cells; a pull-up driver connected between a supply voltage source and an output line, the pull-up driver being driven in response to a first logic of the data signal from the input line; a pull-down driver connected between a ground voltage source and the output line, the pull-down driver being driven complementarily to the pull-up driver in response to a second logic of the data signal from the input line; at least one auxiliary pull-up driver connected in parallel to the pull-up driver; and a controller for driving the at least one auxiliary pull-up driver for a predetermined time period from a start portion of the first logic of the data signal from the input line. With this construction, the data output buffer can enhance a response characteristic of an output signal with respect to the input data signal to enhance the data access speed of the semiconductor memory device.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; PULSE TECHNIQUE ; STATIC STORES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19991115&amp;DB=EPODOC&amp;CC=JP&amp;NR=2978731B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19991115&amp;DB=EPODOC&amp;CC=JP&amp;NR=2978731B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BOKU KIU</creatorcontrib><title>JP2978731B</title><description>A data output buffer for a semiconductor memory device having a plurality of memory cells, each of the memory cells storing a data signal. The data output buffer comprises: an input line for inputting the data signal from each of the memory cells; a pull-up driver connected between a supply voltage source and an output line, the pull-up driver being driven in response to a first logic of the data signal from the input line; a pull-down driver connected between a ground voltage source and the output line, the pull-down driver being driven complementarily to the pull-up driver in response to a second logic of the data signal from the input line; at least one auxiliary pull-up driver connected in parallel to the pull-up driver; and a controller for driving the at least one auxiliary pull-up driver for a predetermined time period from a start portion of the first logic of the data signal from the input line. With this construction, the data output buffer can enhance a response characteristic of an output signal with respect to the input data signal to enhance the data access speed of the semiconductor memory device.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>PULSE TECHNIQUE</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODyCjCyNLcwNzZ04mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACt3G4g</recordid><startdate>19991115</startdate><enddate>19991115</enddate><creator>BOKU KIU</creator><scope>EVB</scope></search><sort><creationdate>19991115</creationdate><title>JP2978731B</title><author>BOKU KIU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2978731BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>PULSE TECHNIQUE</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>BOKU KIU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BOKU KIU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JP2978731B</title><date>1999-11-15</date><risdate>1999</risdate><abstract>A data output buffer for a semiconductor memory device having a plurality of memory cells, each of the memory cells storing a data signal. The data output buffer comprises: an input line for inputting the data signal from each of the memory cells; a pull-up driver connected between a supply voltage source and an output line, the pull-up driver being driven in response to a first logic of the data signal from the input line; a pull-down driver connected between a ground voltage source and the output line, the pull-down driver being driven complementarily to the pull-up driver in response to a second logic of the data signal from the input line; at least one auxiliary pull-up driver connected in parallel to the pull-up driver; and a controller for driving the at least one auxiliary pull-up driver for a predetermined time period from a start portion of the first logic of the data signal from the input line. With this construction, the data output buffer can enhance a response characteristic of an output signal with respect to the input data signal to enhance the data access speed of the semiconductor memory device.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
STATIC STORES
title JP2978731B
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T04%3A25%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BOKU%20KIU&rft.date=1999-11-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2978731BB2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true