JP2959100B

PURPOSE:To eliminate unevenness in implantation due to structural or any other factor of an ion implanting device by performing ion implantation on the basis of No.1 scan waveform, measuring the distribution of implantation amount, and thereupon determining No.2 scanning waveform. CONSTITUTION:A pro...

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Bibliographische Detailangaben

1. Verfasser:	SENOO KAZUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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