JP2959100B

PURPOSE:To eliminate unevenness in implantation due to structural or any other factor of an ion implanting device by performing ion implantation on the basis of No.1 scan waveform, measuring the distribution of implantation amount, and thereupon determining No.2 scanning waveform. CONSTITUTION:A processing unit 16 determines a first discrete waveform data to correct unevenness in implantation resulting from the structure on the basis of a triangular wave as reference, and a first scanning waveform is determined by least squares method, and scanning waveform data SV and SH are given to analog waveform generators 121, 141, and ion beam scanning is made to perform ion implantation for a target 10. Then the distribution of the implantation amount in the plane of the target 10 is measured, and the first discrete waveform data is corrected with the result from measurement to determine for determination of a second discrete waveform data, and a second scanning waveform is obtained by least squares method. Because the second scanning waveform includes fed-back information for correcting unevenness in implantation due to a structural or any other factor, ion implantation having very good implantation uniformity can be made with the second scan waveform.