JP2958909B

JP2958909B

An SRAM cell and a method of manufacturing the same are disclosed. An SRAM cell including pull down devices, access devices and pull up devices each having source and drain regions with LDD structure, the source and drain regions of the access devices having: N+ source and drain regions; N- source a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: KIN SAIKO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An SRAM cell and a method of manufacturing the same are disclosed. An SRAM cell including pull down devices, access devices and pull up devices each having source and drain regions with LDD structure, the source and drain regions of the access devices having: N+ source and drain regions; N- source and drain regions formed under the N+ source and drain regions; and P- impurity regions whose predetermined portion is overlapped with the N- source and drain region.