JP2953407B

A DRAM having a capacitor with a hemispherical silicon grain (HSG) type lower electrode is provided with a monitor element to accurately evaluate the capacitive dielectric film, and to evaluate the increment of the surface area of the lower electrode due to its roughened structure. The surface of th...

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Bibliographische Detailangaben

Hauptverfasser:	OKAMURA KENJI, HIROTA TOSHUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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