JP2953407B
A DRAM having a capacitor with a hemispherical silicon grain (HSG) type lower electrode is provided with a monitor element to accurately evaluate the capacitive dielectric film, and to evaluate the increment of the surface area of the lower electrode due to its roughened structure. The surface of th...
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| Sprache: | eng |
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| Zusammenfassung: | A DRAM having a capacitor with a hemispherical silicon grain (HSG) type lower electrode is provided with a monitor element to accurately evaluate the capacitive dielectric film, and to evaluate the increment of the surface area of the lower electrode due to its roughened structure. The surface of the lower electrode of the capacitor is formed in a roughened structure in a memory section of a semiconductor chip while a capacitor having a lower electrode with a smooth shape is formed on a monitor element section of the semiconductor chip. |
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