JP2927862B

PURPOSE:To prevent a decrease in bonding rate by a method wherein an electrode is provided with a needle electrode part to intersect orthogonally to the point of a wire and the points of the electrode and the wire are provided approachably each other and isolably from each other along the directions of axial lines in the vicinity of the needle electrode part and the point of the wire. CONSTITUTION:When a prescribed voltage is applied to an electrode 13 and a wire 11 by a power supply 14, discharge K1 is generated between a needle electrode part 13a and a region at a distance of a prescribed length from the point of the wire 11. The length of a recrystallized part, which is generated by the discharge, of the wire 11 become larger compared to the length of a recrystallized part generated by discharge generated by a conventional wire bonding device and the wire 11 is bent in a large curvature radius. Accordingly, the height of a loop consisting of the wire 11 can be made high and the form of the loop consisting of the wire 11 is stabilized. As a result, the generation of a short-circuit at the edge of a chip and the like are prevented. Laser irradiation is unnecessiated and a bonding rate is accelerated. The length of the recrystallized part of the 11 can be changed by changing a separating distance Y between the wire 11 and the electrode 13 in the direction of an axial line L2 to an isolating distance X between the wire 11 and the electrode 13 in the direction of an axial line L1.