JP2916070B

JP2916070B

PURPOSE:To provide a method for producing the silicon semiconductor, capable of simplifying a cutting process to reduce the thereof. CONSTITUTION:A method for producing silicon semi-conductors is characterized by preliminarily setting dividing members 14 formed in coincidence with the shapes of sili...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAMAZAKI MOTOHARU, OKUNO TETSUHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To provide a method for producing the silicon semiconductor, capable of simplifying a cutting process to reduce the thereof. CONSTITUTION:A method for producing silicon semi-conductors is characterized by preliminarily setting dividing members 14 formed in coincidence with the shapes of silicon ingots 15 in a mold 4, solidifying silicon therein, and subsequently removing the dividing members 14 for producing the silicon ingots 15. The method is further characterized by using a material having good electric conductivity, bad wettability to the silicon material and having a high melting point as a material for the dividing members 14. Concretely, either of tantalum, molybdenum and tungsten is used.