JP2914927B

The illumination method and apparatus used to form micro patterns, which can determine an ellipticity exhibiting optimum contrast gap and contrast by deriving a polarization distribution function by use of equations induced in accordance with the vector image theory and deriving S and P-polarized components (Scom and Pcom) (these components are perpendicular to and parallel to a meridional plane, respectively) of polarized light having x and y-directional components entering an illumination mask, thereby, preventing a contrast difference resulting from a contrast gap generated in the conventional linear polarization method, namely, an inconsistency between the longitudinal direction of the pattern and the polarization direction. Accordingly, it is possible to easily use appropriately elliptically polarized light, thereby being capable of achieving a reduction in contrast gap while achieving an improvement in contrast. The illumination method and apparatus can easily form micro patterns in the fabrication of semiconductor devices, thereby achieving a high integration of semiconductor devices. It is also possible to increase the process margin, thereby improving yield and reliability.