JP2902621B

A method of forming an integrated circuit capacitor includes the steps of forming an insulating layer on an integrated circuit substrate, and forming a conductive layer on the insulating layer opposite the integrated circuit substrate. A patterned ozone tetraethylorthosilicate undoped silicate layer is formed on the conductive layer, and conductive spacers are formed along sidewalls of the ozone tetraethylorthosilicate undoped silicate layer. A dielectric layer is formed on the conductive spacers and on the first conductive layer, and a second conductive layer is formed on the dielectric layer opposite the first conductive layer in the conductive spacers.