JP2793141B
A semiconductor device with a trench element isolation structure having a trench element isolation film formed to have a small width at the boundary between an active region and a field region, thereby capable of obtaining an improved element isolation function while easily planarizing an insulating...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device with a trench element isolation structure having a trench element isolation film formed to have a small width at the boundary between an active region and a field region, thereby capable of obtaining an improved element isolation function while easily planarizing an insulating film formed in the trench. A thick oxide film is formed at the field region provided with no trench, thereby preventing formation of a parasitic capacitor between the semiconductor substrate and the gate electrode. |
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