JP2756463B

PURPOSE:To make it possible to use a CCD element having sensitivity in a low-cost visible light region by constituting an image sensor with a solid-state image sensing element wherein silicon for visible-light photographing is a main material and a luminescent material layer for converting infrared-ray intensity distribution into visible-light intensity distribution. CONSTITUTION:An electric field is applied on an electroluminescence panel 102, and light is uniformly emitted from the panel. A light beam which is generated in a semiconductor laser is projected through the hole part of a substrate 104. The beam is transmitted through a solid-state image sensing element 101 and reaches the panel 102 in contact with the image input surface of the element 101. The illuminated part is extinguished, and the image of the infrared rays is converted into the image of negative visible light. The visible light of the negative image which is converted in the panel 102 is inputted into the element 101 through the image input surface and converted into the image signal. An aluminum film 103 covering the panel 102 is screened from external light because the element 101 has sensitivity in a visible light region. Thus the improvement of the performance as a sensor is achieved.