JP2753760B
PURPOSE:To make a burn-in test before cutting an LSI silicon wafer to divide it into LSI silicon chips by forming a soft metal layer 5mum thick on a hard metal layer 10mum whose flatness of a top point is 5mum or less. CONSTITUTION:A terminal 3 for connection with an LSI silicon wafer terminal, whic...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To make a burn-in test before cutting an LSI silicon wafer to divide it into LSI silicon chips by forming a soft metal layer 5mum thick on a hard metal layer 10mum whose flatness of a top point is 5mum or less. CONSTITUTION:A terminal 3 for connection with an LSI silicon wafer terminal, which is formed on a conductor circuit 2 of an electronic circuit board, consists of a soft metal layer 3a and a hard metal layer 3b which is harder than said soft metal layer 3a. When the soft metal layer 3a is connected with the LSI silicon wafer terminal, because it is able to change the shape, it absorbs a variability in height of the terminals or the electronic circuit board 10 and it is connected with all terminals. Then, a contact resistance among the terminals can be reduced at most. Also, at a high temperature for a burn-in test, the soft metal layer 3a prevents a contact failure caused by a relative disaccord of positioning between a silicon wafer and the electronic circuit board 10. A hard metal layer 3b is arranged inside the soft metal layer 3a, which keeps a shape of the connection terminal 3 of the electronic circuit board for burn-in test 10 and enables the use for plural times. |
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