JP2737720B

In a method of forming an amorphous carbon thin film with a plasma chemical vapor deposition method, at least one of a hydrocarbon gas and a carbon fluoride gas is supplied in a reaction chamber as a material gas. By applying a high voltage between two electrodes, a plasma is generated in the reaction chamber using the supplied material gas. In order to prevent the adhesion from depositing on the inner wall, at least a part of the inner wall of the reaction chamber is heated to a predetermined temperature or above such that an adhesion coefficient of the adhesion is 0. Alternatively, in order to prevent the adhesion from depositing on the inner wall, a bias voltage such as one of DC bias, a high frequency bias and a high frequency bias imposed on a DC bias is applied to the electrically conductive reaction chamber.