JP2735442B

PURPOSE:To form a high temperature operating high efficient thermoelectric transducer by a method wherein a sintered body of the third component added alloy mixed with specific amount of As, P as the third additive during the crushing step of a specific ingot is to be heated for the specific time. CONSTITUTION:A mother alloy manufactured by rough-crushing and mixing granular Si and Ge ingot and then melting down steps is to be further rough- crushed. Next, the third component added alloy is manufactured by adding specific amount of As and P to the mother alloy rough-crushed particles. Next, the third component added alloy is crushed, dried up and sieved to manufacture the particle material for sintering step. Next, this material is to be hot-press sintered. Finally, the P type semiconductor 6 (As as additive) and N type semiconductor 7 (P as additive) with the junction surfaces thereof opposed to each other are sealed in a graphite-made capsule 5 so that P-N junction body for the high temperature operating high efficient thermoelectric transducer may be formed by diffusion-junctioning said semiconductors 6, 7 at the junction temperature of 500-800 deg.C by HIP, junction pressure of 10000-50000kg/cm and heat sustaining time for maximum 48 hours.