JP2722362B

JP2722362B

A size of particle or defect in an object is measured. A laser beam is guided through an optical system into the object. A light receiving element receives scattered light from a particle or a defect in the object. A scattering image is formed by an image processor from the scattered light thus rece...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: MORYA KAZUO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:A size of particle or defect in an object is measured. A laser beam is guided through an optical system into the object. A light receiving element receives scattered light from a particle or a defect in the object. A scattering image is formed by an image processor from the scattered light thus received. The size of particle or defect is obtained by integrating a scattering intensity of the scattered light. Also, a size distribution of particle or defect in an object may be acquired by detecting a maximum scattering intensity of each particle or defect. A polarization dependency of scattering may be checked as well.