JP2721840B
A gas flow type angular velocity sensor comprising two semiconductor substrates with all components formed thereon by use of a semiconductor technology and an IC technology, which are coupled with each other to form therein a pair of heat wires, a gas path and a nozzle holes for injecting a gas flow...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A gas flow type angular velocity sensor comprising two semiconductor substrates with all components formed thereon by use of a semiconductor technology and an IC technology, which are coupled with each other to form therein a pair of heat wires, a gas path and a nozzle holes for injecting a gas flow toward the paired heat wires in the gas path. Two heat wires of the pair changes their resistance-temperature characteristics in accordance with a deflection of the gas flow due to the action of angular velocity and a difference between two changed values is picked up and amplified by a resistance bridge circuit and an amplifier circuit formed on the semiconductor substrates to produce an output signal proportional to the angular velocity to be measured. A miniature pump formed on semiconductor substrates and drivable by a piezoelectric element provides a stabilized gas flow in the sensor. Thus constructed sensor is compact, accurate and suitable for mass-production and free from disadvantages of conventional sensors. |
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