JP2657740B

PURPOSE:To obtain a positive type resist composition high in sensitivity and resolution and superior in process aptitude and sensitive to high energy rays and developable with an aqueous alkaline solution by incorporating a silicone polymer and a specified onium salt. CONSTITUTION:The positive type...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KAWAI YOSHIO, TANAKA HARUYORI, MATSUDA KOREHITO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To obtain a positive type resist composition high in sensitivity and resolution and superior in process aptitude and sensitive to high energy rays and developable with an aqueous alkaline solution by incorporating a silicone polymer and a specified onium salt. CONSTITUTION:The positive type resist material comprises the silicone polymer (A) represented by formula I and the onium salt (B) represented by (R)pAM and it can be developed with the aqueous alkaline solution and it is sensitive to high energy rays, and when needed, further it may contain a dissolution inhibitor. In formulae I and (R)pAM the sum of x and m is 1, and X is not 0; n is an integer of 1-3; each of plural R is, independently, an optionally substituted aromatic group; A is sulfonium or trifluoromethanesulfonate, and p is 2 or 3.