JP2651339B

The present invention relates to an improved method of manufacturing pads of a display panel. Al or Al alloy is deposited and patterned on a glass substrate for forming a plurality of gate electrodes and lines. Then a plurality of pads are formed with Ta or Ti, which is capable of forming an anodic...

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Bibliographische Detailangaben
Hauptverfasser:	KIN TOKEI, BAE YONNKUKU, CHO JINSHOKU, KIN SOSHU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The present invention relates to an improved method of manufacturing pads of a display panel. Al or Al alloy is deposited and patterned on a glass substrate for forming a plurality of gate electrodes and lines. Then a plurality of pads are formed with Ta or Ti, which is capable of forming an anodic oxide thereof; each pad extending over an edge of each of the respective gate lines to provide an electrical coupling therebetween. Thereafter, the entire surface of the pads, gate electrodes and lines is subjected to an anodic oxidation under a high anodization voltage. Anodic oxide layers on the pads are then etched away together with a silicon nitride layer during a subsequent pad opening processing step. Consequently, in accordance with the invention, a photoresist masking process for the selective anodic oxidation of Al gate lines and electrodes is eliminated.