JP2641706B

A process for formation of a large area flat panel display, and particularly a process for formation of a large area flat panel display using a side junction is disclosed, in which a large area is achieved by utilizing a side junction. More specifically, there is provided a process for formation of...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	BOKU SHINSHO, MINAMI MOTOMORI, KIN HISAHIRO, BOKU SOSHUN
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A process for formation of a large area flat panel display, and particularly a process for formation of a large area flat panel display using a side junction is disclosed, in which a large area is achieved by utilizing a side junction. More specifically, there is provided a process for formation of a thin film transistor liquid crystal display which can be used on all kinds of flat panel displays which uses glass as the substrate. The process for formation of a large area flat panel display utilizing a side junction according to the present invention includes the steps of: applying a side junction process on thin film transistor unit panels 2 so as to obtain a large area; and coupling a common electrode panel with said large area thin film transistor panel formed through said side junction process.