JP2641416B

PURPOSE: To improve carrier migration in a base region. CONSTITUTION: A photoelectric conversion device is equipped with a transistor and capable of performing a storing action, a read action, and a refresh action, wherein the transistor has a first conductivity-type semiconductor base region 6, a s...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA NOBUYOSHI, OOMI TADAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To improve carrier migration in a base region. CONSTITUTION: A photoelectric conversion device is equipped with a transistor and capable of performing a storing action, a read action, and a refresh action, wherein the transistor has a first conductivity-type semiconductor base region 6, a second conductivity-type semiconductor emitter region 7, and a second conductivity-type semiconductor collector region 5 and capable of storing carriers generated by receiving optical energy, and the base region 6 is gradually lessened in impurity concentration at a distance from its plane of incidence. Letting the impurity concentration at its plane of incidence be NAS, and the impurity concentration at its interface with the collector region 5 be NAi , the base region 6 has an impurity concentration profile to satisfy a formula, NAS/ NAi >3.