JP2575525B

PURPOSE:To improve reproducibility and superconducting characteristics of the title film by subjecting a film of an oxide high-temperature superconductor to heteroepitaxial growth in a mixed gas atmosphere of Ar and O2 on a dielectric electrooptical crystal substrate heat-treated in an atmosphere co...

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Bibliographische Detailangaben
1. Verfasser:	HASHIGUCHI SHOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF CONDUCTORS CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To improve reproducibility and superconducting characteristics of the title film by subjecting a film of an oxide high-temperature superconductor to heteroepitaxial growth in a mixed gas atmosphere of Ar and O2 on a dielectric electrooptical crystal substrate heat-treated in an atmosphere containing O2. CONSTITUTION:A dielectric electrooptical crystal substrate is heat-treated at a temperature (>=550 deg.C) higher than a substrate temperature in film forming and a volatile component of the substrate surface is removed and simultaneously remaining strain by processing of the substrate surface is removed. Then the substrate is heated to film forming temperature and oxide high-temperature superconducting thin film is subjected to heteroepitaxial growth in a mixed gas atmosphere of Ar and O2.