JP2558466B

PURPOSE:To obtain a field-effect transistor having stable characteristics by forming a semiconductor single crystal film onto an amorphous substrate through an organic thin-film having periodicity and shaping a main electrode region or at least one part of an active region to the single crystal film. CONSTITUTION:A semiconductor single crystal film 3 is formed onto an amorphous substrate 1 through an organic thin-film 2 having periodicity, and a main electrode region 9 or at least one part of an active region 8 is shaped to the semiconductor single crystal film 3. The organic thin-film 2 such as an LB film 2 using an silane-coupling agent such as chlorosilane and further the semiconductor single crystal film 3 such as a P-type Si single crystal film 3 are formed onto the amorphous substrate 1 consisting of, SiO2, etc. The surface of the P-type Si single crystal film 3 held by the main electrode regions 9 such as N-type main electrode regions 9 is used as the active region 8 such as a channel region 8, and a gate insulating film 4 and a gate electrode 5 are shaped onto the regions 8, 9, thus constituting a MOS type field-effect transistor composed of Si.