JP2545184B

A semiconductor device comprising a wiring layer having a novel contact structure. The semiconductor device includes a semiconductor substrate (31, 51), an insulating layer having an opening (contact hole via a recess), a reactive spacer (37a) formed on the sidewall of the opening or a reactive layer (57a) formed on the sidewall and on the bottom surface of the opening and a conductive layer (39a, 59a) formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer (37a, 57a) is formed on the sidewall of the opening, when the conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer (37a, 57a) improves the reflow of the conductive layer (39, 59) during a heat-treating step for filling the opening at a high temperature below a melting temperature. This, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 mu m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.