JP2543122B

PURPOSE:To obtain a resist having high sensitivity and high resolution by using a specified polymer in an upper layer resist of a two layered resist. CONSTITUTION:The afore-mentioned specified polymer has a linear bond expressed by formula I and a bond expressed by formula II, in its molecule. Said...

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Hauptverfasser:	ENDO MASATAKA, TANAKA YASUHISA, ISHIHARA TOSHINOBU, OGAWA KAZUFUMI, TANI YOSHUKI, KUBOTA TOORU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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creator	ENDO MASATAKA TANAKA YASUHISA ISHIHARA TOSHINOBU OGAWA KAZUFUMI TANI YOSHUKI KUBOTA TOORU
description	PURPOSE:To obtain a resist having high sensitivity and high resolution by using a specified polymer in an upper layer resist of a two layered resist. CONSTITUTION:The afore-mentioned specified polymer has a linear bond expressed by formula I and a bond expressed by formula II, in its molecule. Said bonds transform to SiO2 by oxygen plasma and provide an intense absorption peak only in a far ultraviolet region, accordingly, the polymer is preferred as a material to be incorporated into a single layered resist or an upper layer of two layered resist for far ultraviolet ray lithography. Moreover, all ambient instruments of stepper are made suitable for use by only changing a light source and an optical system in a far ultraviolet exposure. Thus, a resist having high sensitivity and satisfactory definition is obtd.
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CONSTITUTION:The afore-mentioned specified polymer has a linear bond expressed by formula I and a bond expressed by formula II, in its molecule. Said bonds transform to SiO2 by oxygen plasma and provide an intense absorption peak only in a far ultraviolet region, accordingly, the polymer is preferred as a material to be incorporated into a single layered resist or an upper layer of two layered resist for far ultraviolet ray lithography. Moreover, all ambient instruments of stepper are made suitable for use by only changing a light source and an optical system in a far ultraviolet exposure. Thus, a resist having high sensitivity and satisfactory definition is obtd.</description><edition>6</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; AUXILIARY PROCESSES IN PHOTOGRAPHY ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTROGRAPHY ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961016&DB=EPODOC&CC=JP&NR=2543122B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961016&DB=EPODOC&CC=JP&NR=2543122B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ENDO MASATAKA</creatorcontrib><creatorcontrib>TANAKA YASUHISA</creatorcontrib><creatorcontrib>ISHIHARA TOSHINOBU</creatorcontrib><creatorcontrib>OGAWA KAZUFUMI</creatorcontrib><creatorcontrib>TANI YOSHUKI</creatorcontrib><creatorcontrib>KUBOTA TOORU</creatorcontrib><title>JP2543122B</title><description>PURPOSE:To obtain a resist having high sensitivity and high resolution by using a specified polymer in an upper layer resist of a two layered resist. CONSTITUTION:The afore-mentioned specified polymer has a linear bond expressed by formula I and a bond expressed by formula II, in its molecule. Said bonds transform to SiO2 by oxygen plasma and provide an intense absorption peak only in a far ultraviolet region, accordingly, the polymer is preferred as a material to be incorporated into a single layered resist or an upper layer of two layered resist for far ultraviolet ray lithography. Moreover, all ambient instruments of stepper are made suitable for use by only changing a light source and an optical system in a far ultraviolet exposure. 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CONSTITUTION:The afore-mentioned specified polymer has a linear bond expressed by formula I and a bond expressed by formula II, in its molecule. Said bonds transform to SiO2 by oxygen plasma and provide an intense absorption peak only in a far ultraviolet region, accordingly, the polymer is preferred as a material to be incorporated into a single layered resist or an upper layer of two layered resist for far ultraviolet ray lithography. Moreover, all ambient instruments of stepper are made suitable for use by only changing a light source and an optical system in a far ultraviolet exposure. Thus, a resist having high sensitivity and satisfactory definition is obtd.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
title	JP2543122B
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