JP2543122B

PURPOSE:To obtain a resist having high sensitivity and high resolution by using a specified polymer in an upper layer resist of a two layered resist. CONSTITUTION:The afore-mentioned specified polymer has a linear bond expressed by formula I and a bond expressed by formula II, in its molecule. Said...

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Bibliographische Detailangaben
Hauptverfasser:	ENDO MASATAKA, TANAKA YASUHISA, ISHIHARA TOSHINOBU, OGAWA KAZUFUMI, TANI YOSHUKI, KUBOTA TOORU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a resist having high sensitivity and high resolution by using a specified polymer in an upper layer resist of a two layered resist. CONSTITUTION:The afore-mentioned specified polymer has a linear bond expressed by formula I and a bond expressed by formula II, in its molecule. Said bonds transform to SiO2 by oxygen plasma and provide an intense absorption peak only in a far ultraviolet region, accordingly, the polymer is preferred as a material to be incorporated into a single layered resist or an upper layer of two layered resist for far ultraviolet ray lithography. Moreover, all ambient instruments of stepper are made suitable for use by only changing a light source and an optical system in a far ultraviolet exposure. Thus, a resist having high sensitivity and satisfactory definition is obtd.