JP2533500B

PURPOSE:To decrease the resistance of a substrate at a CMOS part, by growing a first P-type epitaxial layer before an N-type phosphorus embedded layer is formed, so that the thickness of the epitaxial layer is made to be the thickness of a part, where the N-type phosphorus embedded and diffused laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATONAKA KOICHIRO, KIMURA MASATOSHI, OKABE TAKEAKI, KODA TOYOMASA, SAKAMOTO MITSUZO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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