JP2518141B
PURPOSE:To form the infrared absorbing layers of an infrared detector on the required parts only. CONSTITUTION:An infrared detector is provided with a plurality of infrared sensors 4 placed at predetermined intervals on a semiconductor substrate 1, an insulating film 2 for covering and protecting th...
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| creator | MURASHIMA SUSUMU |
| description | PURPOSE:To form the infrared absorbing layers of an infrared detector on the required parts only. CONSTITUTION:An infrared detector is provided with a plurality of infrared sensors 4 placed at predetermined intervals on a semiconductor substrate 1, an insulating film 2 for covering and protecting the infrared sensors 4, and infrared absorbing layers 5 laminated on the insulating layer 2. In addition, resistors 3 covered with the insulating film 2 are placed on the regions except the detecting regions of the infrared sensors 4. In depositing the infrared absorbing layers 5, an electric current is carried to the resistors 3 for generating heat to dissolve the unrequired parts in the absorbing layers, individually forming the infrared absorbing layers 5 on the infrared sensors 4 only. Thus, crosstalk between the infrared sensors 4 is reduced. |
| format | Patent |
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CONSTITUTION:An infrared detector is provided with a plurality of infrared sensors 4 placed at predetermined intervals on a semiconductor substrate 1, an insulating film 2 for covering and protecting the infrared sensors 4, and infrared absorbing layers 5 laminated on the insulating layer 2. In addition, resistors 3 covered with the insulating film 2 are placed on the regions except the detecting regions of the infrared sensors 4. In depositing the infrared absorbing layers 5, an electric current is carried to the resistors 3 for generating heat to dissolve the unrequired parts in the absorbing layers, individually forming the infrared absorbing layers 5 on the infrared sensors 4 only. Thus, crosstalk between the infrared sensors 4 is reduced.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; COLORIMETRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; PHYSICS ; RADIATION PYROMETRY ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960724&DB=EPODOC&CC=JP&NR=2518141B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960724&DB=EPODOC&CC=JP&NR=2518141B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MURASHIMA SUSUMU</creatorcontrib><title>JP2518141B</title><description>PURPOSE:To form the infrared absorbing layers of an infrared detector on the required parts only. CONSTITUTION:An infrared detector is provided with a plurality of infrared sensors 4 placed at predetermined intervals on a semiconductor substrate 1, an insulating film 2 for covering and protecting the infrared sensors 4, and infrared absorbing layers 5 laminated on the insulating layer 2. In addition, resistors 3 covered with the insulating film 2 are placed on the regions except the detecting regions of the infrared sensors 4. In depositing the infrared absorbing layers 5, an electric current is carried to the resistors 3 for generating heat to dissolve the unrequired parts in the absorbing layers, individually forming the infrared absorbing layers 5 on the infrared sensors 4 only. Thus, crosstalk between the infrared sensors 4 is reduced.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>COLORIMETRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODyCjAyNbQwNDF04mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACLaG1s</recordid><startdate>19960724</startdate><enddate>19960724</enddate><creator>MURASHIMA SUSUMU</creator><scope>EVB</scope></search><sort><creationdate>19960724</creationdate><title>JP2518141B</title><author>MURASHIMA SUSUMU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2518141BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>COLORIMETRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MURASHIMA SUSUMU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MURASHIMA SUSUMU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JP2518141B</title><date>1996-07-24</date><risdate>1996</risdate><abstract>PURPOSE:To form the infrared absorbing layers of an infrared detector on the required parts only. CONSTITUTION:An infrared detector is provided with a plurality of infrared sensors 4 placed at predetermined intervals on a semiconductor substrate 1, an insulating film 2 for covering and protecting the infrared sensors 4, and infrared absorbing layers 5 laminated on the insulating layer 2. In addition, resistors 3 covered with the insulating film 2 are placed on the regions except the detecting regions of the infrared sensors 4. In depositing the infrared absorbing layers 5, an electric current is carried to the resistors 3 for generating heat to dissolve the unrequired parts in the absorbing layers, individually forming the infrared absorbing layers 5 on the infrared sensors 4 only. Thus, crosstalk between the infrared sensors 4 is reduced.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING |
| title | JP2518141B |
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