JP2518141B

PURPOSE:To form the infrared absorbing layers of an infrared detector on the required parts only. CONSTITUTION:An infrared detector is provided with a plurality of infrared sensors 4 placed at predetermined intervals on a semiconductor substrate 1, an insulating film 2 for covering and protecting th...

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Bibliographische Detailangaben
1. Verfasser:	MURASHIMA SUSUMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PURPOSE:To form the infrared absorbing layers of an infrared detector on the required parts only. CONSTITUTION:An infrared detector is provided with a plurality of infrared sensors 4 placed at predetermined intervals on a semiconductor substrate 1, an insulating film 2 for covering and protecting the infrared sensors 4, and infrared absorbing layers 5 laminated on the insulating layer 2. In addition, resistors 3 covered with the insulating film 2 are placed on the regions except the detecting regions of the infrared sensors 4. In depositing the infrared absorbing layers 5, an electric current is carried to the resistors 3 for generating heat to dissolve the unrequired parts in the absorbing layers, individually forming the infrared absorbing layers 5 on the infrared sensors 4 only. Thus, crosstalk between the infrared sensors 4 is reduced.