JP2517085B

PURPOSE:To readily enable formation of an oxide superconductor thin film excellent in characteristics on a silicon substrate by preforming the first thin film of an oxide containing Ba on the silicon substrate and forming the second oxide thin film with a high Ba constant consisting of the same constituent elements on the first thin film. CONSTITUTION:In a superconducting thin film having the first thin film 12 contacting a silicon substrate 11 and the second thin film 13 contacting the first thin film 12 on the silicon substrate 11, the following construction is adopted. That is the first thin film 12 and the second thin film 13 are composed of the same constituent elements containing barium and at least the second thin film 13 exhibits superconducting characteristics with a lower content of barium in the first thin film 12 than that in the second thin film 13. An oxide containing element A, Ba and Cu at 0.5