GALLIUM NITRIDE SUBSTRATE
To provide a GaN substrate capable of reducing deterioration in yield when manufacturing a laser diode when used as a c-plane GaN substrate for laser diodes.SOLUTION: A gallium nitride substrate has a main surface having an inclination of 0-20 degrees from a (0001) plane and an area of 15 cm2 or mor...
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| creator | INOUE CHIKAYOSHI TASHIRO MASAYUKI KAJIMOTO TETSUJI FUKADA TAKASHI |
| description | To provide a GaN substrate capable of reducing deterioration in yield when manufacturing a laser diode when used as a c-plane GaN substrate for laser diodes.SOLUTION: A gallium nitride substrate has a main surface having an inclination of 0-20 degrees from a (0001) plane and an area of 15 cm2 or more. In a photoluminescence imaging image (a wavelength: 365 nm and an objective lens: 5 times) on the main surface, a stain-like pattern having a diameter of 50 μm or more is not observed.SELECTED DRAWING: None
【課題】レーザーダイオード用ｃ面ＧａＮ基板として用いる場合に、レーザーダイオード製造時の歩留まり悪化を低減できるＧａＮ基板を提供する。【解決手段】（０００１）面からの傾斜が０～２０度であり、面積が１５ｃｍ２以上である主面を有する窒化ガリウム基板であって、前記主面のフォトルミネッセンスイメージング像（波長：３６５ｎｍ、対物レンズ５倍）において直径５０μｍ以上のシミ状模様が観察されないことを特徴とする、窒化ガリウム基板。【選択図】なし |
| format | Patent |
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【課題】レーザーダイオード用ｃ面ＧａＮ基板として用いる場合に、レーザーダイオード製造時の歩留まり悪化を低減できるＧａＮ基板を提供する。【解決手段】（０００１）面からの傾斜が０～２０度であり、面積が１５ｃｍ２以上である主面を有する窒化ガリウム基板であって、前記主面のフォトルミネッセンスイメージング像（波長：３６５ｎｍ、対物レンズ５倍）において直径５０μｍ以上のシミ状模様が観察されないことを特徴とする、窒化ガリウム基板。【選択図】なし</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240909&DB=EPODOC&CC=JP&NR=2024122611A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240909&DB=EPODOC&CC=JP&NR=2024122611A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>INOUE CHIKAYOSHI</creatorcontrib><creatorcontrib>TASHIRO MASAYUKI</creatorcontrib><creatorcontrib>KAJIMOTO TETSUJI</creatorcontrib><creatorcontrib>FUKADA TAKASHI</creatorcontrib><title>GALLIUM NITRIDE SUBSTRATE</title><description>To provide a GaN substrate capable of reducing deterioration in yield when manufacturing a laser diode when used as a c-plane GaN substrate for laser diodes.SOLUTION: A gallium nitride substrate has a main surface having an inclination of 0-20 degrees from a (0001) plane and an area of 15 cm2 or more. In a photoluminescence imaging image (a wavelength: 365 nm and an objective lens: 5 times) on the main surface, a stain-like pattern having a diameter of 50 μm or more is not observed.SELECTED DRAWING: None
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【課題】レーザーダイオード用ｃ面ＧａＮ基板として用いる場合に、レーザーダイオード製造時の歩留まり悪化を低減できるＧａＮ基板を提供する。【解決手段】（０００１）面からの傾斜が０～２０度であり、面積が１５ｃｍ２以上である主面を有する窒化ガリウム基板であって、前記主面のフォトルミネッセンスイメージング像（波長：３６５ｎｍ、対物レンズ５倍）において直径５０μｍ以上のシミ状模様が観察されないことを特徴とする、窒化ガリウム基板。【選択図】なし</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | GALLIUM NITRIDE SUBSTRATE |
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