GALLIUM NITRIDE SUBSTRATE

To provide a GaN substrate capable of reducing deterioration in yield when manufacturing a laser diode when used as a c-plane GaN substrate for laser diodes.SOLUTION: A gallium nitride substrate has a main surface having an inclination of 0-20 degrees from a (0001) plane and an area of 15 cm2 or mor...

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Hauptverfasser:	INOUE CHIKAYOSHI, TASHIRO MASAYUKI, KAJIMOTO TETSUJI, FUKADA TAKASHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide a GaN substrate capable of reducing deterioration in yield when manufacturing a laser diode when used as a c-plane GaN substrate for laser diodes.SOLUTION: A gallium nitride substrate has a main surface having an inclination of 0-20 degrees from a (0001) plane and an area of 15 cm2 or more. In a photoluminescence imaging image (a wavelength: 365 nm and an objective lens: 5 times) on the main surface, a stain-like pattern having a diameter of 50 μm or more is not observed.SELECTED DRAWING: None 【課題】レーザーダイオード用ｃ面ＧａＮ基板として用いる場合に、レーザーダイオード製造時の歩留まり悪化を低減できるＧａＮ基板を提供する。【解決手段】（０００１）面からの傾斜が０～２０度であり、面積が１５ｃｍ２以上である主面を有する窒化ガリウム基板であって、前記主面のフォトルミネッセンスイメージング像（波長：３６５ｎｍ、対物レンズ５倍）において直径５０μｍ以上のシミ状模様が観察されないことを特徴とする、窒化ガリウム基板。【選択図】なし