METHOD, ASSEMBLY AND SYSTEM FOR FILM DEPOSITION AND CONTROL

To provide methods, systems and assemblies suitable for gas-phase processes.SOLUTION: Methods, systems and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor plate and a susceptor attachment. The susceptor attachment can comprise a ramp region and a...

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Bibliographische Detailangaben
Hauptverfasser:	JERELD LEE WINKLER, PAUL MA, ERIC CHRISTOPHER STEVENS, AMIT MISHRA, CHAD RUSSELL LUNCEFORD
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide methods, systems and assemblies suitable for gas-phase processes.SOLUTION: Methods, systems and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor plate and a susceptor attachment. The susceptor attachment can comprise a ramp region and a conductance control region above and exterior to the ramp region. The methods, systems and assemblies can be used to obtain desired (e.g., composition and/or thickness) profiles of a material on a substrate surface.SELECTED DRAWING: Figure 1 【課題】気相プロセスに適した方法、システム、およびアセンブリを提供する。【解決手段】気相プロセスに適した方法、システム、およびアセンブリが開示される。例示的なアセンブリは、サセプタプレートおよびサセプタアタッチメントを含む。サセプタアタッチメントは、傾斜領域と、傾斜領域の上方かつ外部のコンダクタンス制御領域と、を備えることができる。方法、システム、およびアセンブリを使用して、基材表面上の材料の所望の（例えば、組成および／または厚さ）プロファイルを得ることができる。【選択図】図１