SILICON AND SILICON GERMANIUM ETCHANT COMPOSITION, AND PATTERN FORMATION METHOD USING THEM

To provide a silicon and a silicon germanium etchant composition, and a pattern formation method using them.SOLUTION: A silicon and a silicon germanium etchant composition, is expressed by water, oxidant, a fluorine-based chemical compound, a chemical formula 1, or a chemical formula 2, in which 5 m...

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Hauptverfasser:	KIM JIWON, WU CHENG-MIN, WOO HEESUK, ROH JINKYU, YOON HYOJOONG, BAE SANG WON, AHN KYU SANG, CHEN JINGMO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a silicon and a silicon germanium etchant composition, and a pattern formation method using them.SOLUTION: A silicon and a silicon germanium etchant composition, is expressed by water, oxidant, a fluorine-based chemical compound, a chemical formula 1, or a chemical formula 2, in which 5 mass% to 40 mass% of a sea surface active agent is contained as referring by 100 mass% of a liquid composition.SELECTED DRAWING: Figure 1 【課題】シリコン及びシリコンゲルマニウムエッチング液組成物およびこれを用いたパターン形成方法を提供する。【解決手段】シリコン及びシリコンゲルマニウムエッチング液組成物は、水、酸化剤、フッ素系化合物及び化学式１又は化学式２で表され、海面活性剤が、液組成物１００重量％を基準として５重量％～４０重量％含まれる。TIFF2024109064000015.tif31170TIFF2024109064000016.tif40170【選択図】図１