SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

To provide a substrate processing device and a substrate processing method, capable of reducing occurrence of collapse of a pattern by controlling a film thickness of a solidified film depending on concentration of a sublimable material in processing liquid, when liquid adhered to a substrate surface is removed by batch processing.SOLUTION: A substrate processing device 1 includes: a processing tank 11 storing processing liquid containing a sublimable material and a solvent; a holding section 20 lifted with respect to the processing tank 11 while collectively holding a substrate W group; a lifting mechanism 23 lifting the holding section 20 with respect to the processing tank 11 so that the holding section 20 is immersed in the processing liquid or removed from the processing liquid; a concentration measurement section 40 measuring concentration of the sublimable material in the processing liquid; and a control section 31 controlling the lifting mechanism 23. The lifting mechanism 23 evaporates the solvent while collectively pulling up the substrate W group from the processing liquid, thereby precipitating the sublimable material to form a solidified film. The control section 31 controls the pull-up speed of a substrate W such that a solidified film with a target film thickness is formed depending on the concentration of the sublimable material.SELECTED DRAWING: Figure 1 【課題】基板表面に付着した液体をバッチ処理により除去する際、処理液中の昇華性物質の濃度に応じて固化膜の膜厚を制御することにより、パターンの倒壊の発生を低減することが可能な基板処理装置及び基板処理方法を提供する。【解決手段】基板処理装置１は、昇華性物質と溶媒を含む処理液を貯留する処理槽１１と、基板Ｗ群を一括して保持した状態で処理槽１１に対し昇降させる保持部２０と、保持部２０を処理槽１１に対し昇降させることで処理液中に浸漬させ又は取り出しを行う昇降機構２３と、処理液の昇華性物質の濃度を測定する濃度測定部４０と、昇降機構２３を制御する制御部３１とを備え、昇降機構２３は処理液から基板Ｗ群を一括して引き上げながら溶媒を蒸発させることにより昇華性物質を析出させて固化膜を形成させ、制御部３１は昇華性物質の濃度に応じて目標膜厚の固化膜が形成されるように基板Ｗの引き上げ速度を制御する。【選択図】図１