SEMICONDUCTOR DEVICE

To improve voltage withstanding with a simple structure and shorten the length of a termination structure part.SOLUTION: A termination structure part 101 is disposed outside an active part 102, and includes a p- layer 6, a p- layer 9, and a plurality of p+ layers 8 forming a JTE region, and an n+ ch...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ONISHI YASUHIKO, KOBAYASHI YUSUKE, IWATANI MASANOBU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!