SEMICONDUCTOR ELEMENT

To provide a semiconductor element with improved reliability.SOLUTION: A semiconductor element according to the present invention includes: a substrate including an active region extending in a first direction; a gate structure extending in a second direction while intersecting with the active region on the active region; source/drain regions disposed on the active region outside the gate structure; a back surface insulating layer disposed on a lower surface of the substrate; a vertical power structure disposed between the source/drain regions that are adjacent to each other in the second direction among the source/drain regions, in which a lower surface is exposed from the back surface insulating layer through the substrate and the back surface insulating layer; an interlayer insulating layer disposed on a lower surface of the back surface insulating layer and the lower surface of the vertical power structure; a back surface power structure coupled with the vertical power structure through the interlayer insulating layer; and a first alignment insulating layer disposed on the lower surface of the back surface insulating layer, having a first opening part for exposing the lower surface of the vertical power structure, and being in contact with the back surface power structure.SELECTED DRAWING: Figure 2c 【課題】信頼性の向上した半導体素子を提供する。【解決手段】本発明による半導体素子は、第１方向に延びる活性領域を含む基板、活性領域上において活性領域と交差して第２方向に延びるゲート構造物、ゲート構造物の外側において活性領域上に配置されたソース／ドレイン領域、基板の下面上に配置された裏面絶縁層、ソース／ドレイン領域のうち第２方向に沿って互いに隣接したソース／ドレイン領域の間に配置され、基板及び裏面絶縁層を貫通して裏面絶縁層から下面が露出した垂直電力構造物、裏面絶縁層の下面及び垂直電力構造物の下面上に配置された層間絶縁層、層間絶縁層を貫通して垂直電力構造物と連結された裏面電力構造物、及び裏面絶縁層の下面上に配置され、垂直電力構造物の下面を露出させる第１開口部を有し、裏面電力構造物と接触する第１アライメント絶縁層を含む。【選択図】図２ｃ