LASER PROCESSING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

To provide a laser processing device capable of suppressing adhesion of debris to the second surface of a semiconductor wafer.SOLUTION: A laser processing device (100, 200, 300, 400) includes a stage (20) having a wafer holding surface (20a), a laser irradiation mechanism (40), and a nozzle (50). A...

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Hauptverfasser:	KAMOSHIDA RYO, MATSUMURA TAMIO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	To provide a laser processing device capable of suppressing adhesion of debris to the second surface of a semiconductor wafer.SOLUTION: A laser processing device (100, 200, 300, 400) includes a stage (20) having a wafer holding surface (20a), a laser irradiation mechanism (40), and a nozzle (50). A semiconductor wafer (10) having a first surface (10a) and a second surface (10b) opposite to the first surface is placed on the wafer holding surface such that the wafer holding surface faces the second surface. The laser irradiation mechanism emits laser light (L) from the first surface side. The nozzle (50) supplies liquid (51) from the second surface side.SELECTED DRAWING: Figure 1 【課題】半導体ウェハの第２面へのデブリの付着を抑制可能なレーザ加工装置を提供するものである。【解決手段】レーザ加工装置（１００，２００，３００，４００）は、ウェハ保持面（２０ａ）を有するステージ（２０）と、レーザ照射機構（４０）と、ノズル（５０）とを備えている。ウェハ保持面上には、第１面（１０ａ）及び第１面の反対面である第２面（１０ｂ）を有する半導体ウェハ（１０）がウェハ保持面と第２面とが対向するように配置される。レーザ照射機構は、第１面側からレーザ光（Ｌ）を照射する。ノズル（５０）は、第２面側から液体（５１）を供給する。【選択図】図１