RINSE AND METHOD OF USE THEREOF FOR REMOVING EDGE PROTECTION LAYERS AND RESIDUAL METAL HARDMASK COMPONENTS
To provide a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate.SOLUTION: A rinse includes (i) acetic acid and/or a halogenated acetic acid and (ii) a compound ha...
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Sprache: | eng ; jpn |
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Zusammenfassung: | To provide a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate.SOLUTION: A rinse includes (i) acetic acid and/or a halogenated acetic acid and (ii) a compound having the structure below (where, Ra-Rh independently may be hydrogen, a substituted/unsubstituted (C1-6) alkyl group, a substituted/unsubstituted halogenated (C1-6) alkyl group, a substituted/unsubstituted (C1-6) alkylcarbonyl group, a halogen or a hydroxy group).SELECTED DRAWING: None
【課題】ウェハ/基材のエッジ及び少なくとも一つの近接表面からエッジ保護層及び残留ハードマスク成分(例えば金属)を除去するための洗浄剤及びその使用方法を提供する。【解決手段】洗浄剤は、(i)酢酸及び/またはハロゲン化酢酸、ならびに(ii)下記構造を有する化合物:TIFF2024105549000044.tif50170[式中、Ra~Rhは、それぞれ独立して、水素、置換/非置換の(C1~6)アルキル基、置換/非置換のハロゲン化(C1~6)アルキル基、置換/非置換の(C1~6)アルキルカルボニル基、ハロゲンまたはヒドロキシ基であってよい]を含む。【選択図】なし |
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