MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

To provide a manufacturing method of a semiconductor element capable of suppressing performance degradation of the semiconductor element and improving the yield.SOLUTION: A manufacturing method of a semiconductor element according to the present invention includes the steps of attaching a tape having an ultraviolet-curable adhesive layer to a first surface of a semiconductor wafer having a recess on the first surface and a cutting line on a second surface different from the first surface such that a liquid is sandwiched between the tape and the recess, cutting the semiconductor wafer into semiconductor elements along the cutting line, and irradiating the ultraviolet-curable adhesive layer with ultraviolet light to harden it with the liquid sandwiched between the recess and the tape.SELECTED DRAWING: Figure 2 【課題】半導体素子の性能低下を抑え、歩留まりを向上させることができる半導体素子の製造方法を提供する。【解決手段】本発明に係る半導体素子の製造方法は、第一面に凹部を有し、前記第一面とは異なる第二面に切断ラインを有する半導体ウェハに対し、紫外線硬化型粘着層を有するテープと前記凹部との間に液体を挟むように、前記第一面に前記テープを貼り付ける工程と、前記切断ラインに沿って、前記半導体ウェハを半導体素子に切断する工程と、前記凹部と前記テープの間に前記液体を挟んだ状態で前記紫外線硬化型粘着層に紫外線を照射して硬化させる工程と、を含む。【選択図】図２