MICROWAVE PLASMA CVD DEVICE

To provide a microwave plasma CVD device to solve such the problems that: a diamond synthesis apparatus using existing microwave plasma CVD generates a standing wave in a reaction vessel and has a plasma with uniformity of approximately 1/8 or less of the wavelength, and accordingly is difficult to...

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1. Verfasser: MURATA MASAYOSHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a microwave plasma CVD device to solve such the problems that: a diamond synthesis apparatus using existing microwave plasma CVD generates a standing wave in a reaction vessel and has a plasma with uniformity of approximately 1/8 or less of the wavelength, and accordingly is difficult to address a four-inch class large-area substrate; and a device using an existing standing wave superposition method is difficult in manufacturing a two-output phase-variable microwave power supply, has increased cost and is difficult to be applied to a high-pressure condition indispensable for diamond formation.SOLUTION: A microwave plasma CVD device using a standing wave superposition method uses a reaction chamber comprising a double-ridge type waveguide for generating a plasma to generate two microwaves temporally alternately, causes the respective microwaves to branch into two microwaves with first and second antennae and supplies them into the reaction chamber while causing them to face each other, and forms a first standing wave and a second standing wave of which positions of antinodes are separated by 1/4 of the wavelength. The microwave plasma CVD device can form a plasma with uniformity in terms of the area of approximately (1/2 wavelength)x(1 to 2 wavelength).SELECTED DRAWING: Figure 2 【課題】従来のマイクロ波プラズマCVDによるダイヤモンド合成装置は、反応容器に定在波が発生し、プラズマの均一性は波長の略1/8以下であることから、4インチ級大面積基板への対応が困難である。従来の定在波重畳方式による装置は、2出力位相可変のマイクロ波電源の製造が困難でコストが高く、且つダイヤモンド形成に必須の高圧力条件への適用が困難である。前記問題を解決可能なマイクロ波プラズマCVD装置を提供すること。【解決手段】定在波重畳方式によるマイクロ波プラズマCVD装置であって、プラズマ発生にダブルリッジ型導波管から成る反応室を用い、2つのマイクロ波を時間的に交互に発生し、それぞれを第1及び第2のアンテナで2つに分岐して前記反応室へ対向して供給し、腹の位置が波長の1/4離れた第1の定在波及び第2の定在波を形成させることを特徴とする。略(1/2波長)x(1~2波長)の面積に均一なプラズマを形成することが可能である。【選択図】図2