SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
To provide a method for suppressing particle generation when modifying a film formed on a substrate using microwave plasma.SOLUTION: A substrate processing method for modifying a film formed on a substrate includes forming a precoat film on a surface of a processing vessel by plasma generated from a...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | NOGAMI TAKAFUMI KOTE KENICHI |
| description | To provide a method for suppressing particle generation when modifying a film formed on a substrate using microwave plasma.SOLUTION: A substrate processing method for modifying a film formed on a substrate includes forming a precoat film on a surface of a processing vessel by plasma generated from a precoat gas using microwaves of a first power, preparing the substrate on a mounting table in the processing vessel, and irradiating the film with hydrogen-containing plasma generated from a hydrogen-containing gas using microwaves of a second power smaller than the first power, thereby modifying the film.SELECTED DRAWING: Figure 3
【課題】マイクロ波プラズマを用いて基板上に形成された膜を改質する際、パーティクルを抑制することを提供する。【解決手段】基板上に形成された膜を改質する基板処理方法であって、第１電力のマイクロ波を用いてプリコート用ガスから生成されたプラズマにより処理容器の表面にプリコート膜を形成すること、前記処理容器内の載置台に前記基板を準備すること、及び、前記第１電力より小さい第２電力のマイクロ波を用いて水素含有ガスから生成された水素含有プラズマを前記膜に照射して、前記膜を改質すること、を含む基板処理方法が提供される。【選択図】図３ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2024088507A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2024088507A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2024088507A3</originalsourceid><addsrcrecordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HdRcPRzUcAq7xgQ4AgUCw3mYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkYmBhYWpgbmjsZEKQIA69orGg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><source>esp@cenet</source><creator>NOGAMI TAKAFUMI ; KOTE KENICHI</creator><creatorcontrib>NOGAMI TAKAFUMI ; KOTE KENICHI</creatorcontrib><description>To provide a method for suppressing particle generation when modifying a film formed on a substrate using microwave plasma.SOLUTION: A substrate processing method for modifying a film formed on a substrate includes forming a precoat film on a surface of a processing vessel by plasma generated from a precoat gas using microwaves of a first power, preparing the substrate on a mounting table in the processing vessel, and irradiating the film with hydrogen-containing plasma generated from a hydrogen-containing gas using microwaves of a second power smaller than the first power, thereby modifying the film.SELECTED DRAWING: Figure 3
【課題】マイクロ波プラズマを用いて基板上に形成された膜を改質する際、パーティクルを抑制することを提供する。【解決手段】基板上に形成された膜を改質する基板処理方法であって、第１電力のマイクロ波を用いてプリコート用ガスから生成されたプラズマにより処理容器の表面にプリコート膜を形成すること、前記処理容器内の載置台に前記基板を準備すること、及び、前記第１電力より小さい第２電力のマイクロ波を用いて水素含有ガスから生成された水素含有プラズマを前記膜に照射して、前記膜を改質すること、を含む基板処理方法が提供される。【選択図】図３</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240702&DB=EPODOC&CC=JP&NR=2024088507A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240702&DB=EPODOC&CC=JP&NR=2024088507A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NOGAMI TAKAFUMI</creatorcontrib><creatorcontrib>KOTE KENICHI</creatorcontrib><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><description>To provide a method for suppressing particle generation when modifying a film formed on a substrate using microwave plasma.SOLUTION: A substrate processing method for modifying a film formed on a substrate includes forming a precoat film on a surface of a processing vessel by plasma generated from a precoat gas using microwaves of a first power, preparing the substrate on a mounting table in the processing vessel, and irradiating the film with hydrogen-containing plasma generated from a hydrogen-containing gas using microwaves of a second power smaller than the first power, thereby modifying the film.SELECTED DRAWING: Figure 3
【課題】マイクロ波プラズマを用いて基板上に形成された膜を改質する際、パーティクルを抑制することを提供する。【解決手段】基板上に形成された膜を改質する基板処理方法であって、第１電力のマイクロ波を用いてプリコート用ガスから生成されたプラズマにより処理容器の表面にプリコート膜を形成すること、前記処理容器内の載置台に前記基板を準備すること、及び、前記第１電力より小さい第２電力のマイクロ波を用いて水素含有ガスから生成された水素含有プラズマを前記膜に照射して、前記膜を改質すること、を含む基板処理方法が提供される。【選択図】図３</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HdRcPRzUcAq7xgQ4AgUCw3mYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkYmBhYWpgbmjsZEKQIA69orGg</recordid><startdate>20240702</startdate><enddate>20240702</enddate><creator>NOGAMI TAKAFUMI</creator><creator>KOTE KENICHI</creator><scope>EVB</scope></search><sort><creationdate>20240702</creationdate><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><author>NOGAMI TAKAFUMI ; KOTE KENICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024088507A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NOGAMI TAKAFUMI</creatorcontrib><creatorcontrib>KOTE KENICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NOGAMI TAKAFUMI</au><au>KOTE KENICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><date>2024-07-02</date><risdate>2024</risdate><abstract>To provide a method for suppressing particle generation when modifying a film formed on a substrate using microwave plasma.SOLUTION: A substrate processing method for modifying a film formed on a substrate includes forming a precoat film on a surface of a processing vessel by plasma generated from a precoat gas using microwaves of a first power, preparing the substrate on a mounting table in the processing vessel, and irradiating the film with hydrogen-containing plasma generated from a hydrogen-containing gas using microwaves of a second power smaller than the first power, thereby modifying the film.SELECTED DRAWING: Figure 3
【課題】マイクロ波プラズマを用いて基板上に形成された膜を改質する際、パーティクルを抑制することを提供する。【解決手段】基板上に形成された膜を改質する基板処理方法であって、第１電力のマイクロ波を用いてプリコート用ガスから生成されたプラズマにより処理容器の表面にプリコート膜を形成すること、前記処理容器内の載置台に前記基板を準備すること、及び、前記第１電力より小さい第２電力のマイクロ波を用いて水素含有ガスから生成された水素含有プラズマを前記膜に照射して、前記膜を改質すること、を含む基板処理方法が提供される。【選択図】図３</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2024088507A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T12%3A14%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NOGAMI%20TAKAFUMI&rft.date=2024-07-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2024088507A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |