INSPECTION DEVICE
To provide an inspection device that can improve the detection accuracy of a characteristic of an MRAM element.SOLUTION: An inspection device 1 includes: a stage 10 that has a magnetoresistive memory element fixed on a stage surface 13; a plurality of electromagnets 20 that generate a first magnetic...
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Zusammenfassung: | To provide an inspection device that can improve the detection accuracy of a characteristic of an MRAM element.SOLUTION: An inspection device 1 includes: a stage 10 that has a magnetoresistive memory element fixed on a stage surface 13; a plurality of electromagnets 20 that generate a first magnetic field in which a direction of a magnetic field component in a vertical direction perpendicular to the stage surface 13 changes from a first direction to a second direction depending on a position on the stage surface 13 and a second magnetic field in which a direction of the magnetic field component in an in-plane direction parallel to the stage surface 13 changes from a third direction to a fourth direction depending on the position on the stage surface 13; an optical system 30 that irradiates the magnetoresistive memory element with illumination light including polarized light and condenses reflection light of the illumination light reflected by the magnetoresistive memory element; and a detector 40 that detects the reflection light in a case where a position of the magnetoresistive memory element in the first magnetic field is changed and the reflection light in a case where the position of the magnetoresistive memory element in the second magnetic field is changed.SELECTED DRAWING: Figure 1
【課題】MRAM素子の特性の検出精度を向上させることができる検査装置を提供する。【解決手段】検査装置1は、ステージ面13上に磁気抵抗メモリ素子を固定させたステージ10と、ステージ面13に垂直な垂直方向の磁場成分の向きがステージ面13上の位置によって第1向きから第2向きに変化する第1磁場、及び、ステージ面13に平行な面内方向の磁場成分の向きがステージ面13上の位置によって第3向きから第4向きに変化する第2磁場を発生させる複数の電磁石20と、偏光を含む照明光で磁気抵抗メモリ素子を照明するとともに、照明光が磁気抵抗メモリ素子で反射した反射光を集光する光学系30と、第1磁場内における磁気抵抗メモリ素子の位置を変化させた場合の反射光、及び、第2磁場内における磁気抵抗メモリ素子の位置を変化させた場合の反射光を検出する検出器40と、を備える。【選択図】図1 |
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