SEMICONDUCTOR DEVICE

To provide a semiconductor device that can be mass-produced even in a configuration that has a gate electrode on the rear surface side.SOLUTION: A semiconductor device includes: a first control electrode and a second control electrode for switching which are provided on a first principal surface and a second principal surface of a semiconductor substrate; a first control electrode pad which is electrically connected to the first control electrode; a first through via which penetrates the semiconductor substrate in the thickness direction and has a conductor therein that electrically connects between the first principal surface and the second principal surface; and a second control electrode pad which is provided on the first principal surface and is electrically connected to the second control electrode through the first through via.SELECTED DRAWING: Figure 3 【課題】裏面側にゲート電極を備える構成においても、量産化が可能な半導体装置を提供する。【解決手段】半導体基板の第１の主面および第２の主面にそれぞれ設けられた、スイッチングのための第１の制御電極および第２の制御電極と、第１の制御電極と電気的に接続された第１の制御電極パッドと、半導体基板を厚み方向に貫通し、内部に第１の主面と第２の主面との間を電気的に接続する導電体を有する第１の貫通ビアと、第１の主面の上に設けられ、第２の制御電極に第１の貫通ビアを介して電気的に接続された第２の制御電極パッドと、を備えている。【選択図】図３