SEMICONDUCTOR DEVICE

To prevent carriers from flowing from a diode region to an IGBT region during diode recovery, causing carrier concentration at a boundary and destroying an element.SOLUTION: A semiconductor device having an IGBT region 4, a diode region 5, and a wiring region 6 in the same chip includes: a wiring region 6 which includes a gate runner 7 that supplies a gate potential to a trench gate electrode 20, a well layer 28 in which an impurity diffusion depth is deeper than that of the trench 19, and a plurality of first contact regions 33 that electrically connects the well layer 28 and an emitter electrode 21, where an area of the first contact region 33 in the vicinity 10 of the boundary close to a boundary 9 between the IGBT region 4 and the diode region 5 is larger than an area of the first contact region 33 located farther from the vicinity of the boundary 10.SELECTED DRAWING: Figure 2 【課題】ダイオードのリカバリ時にダイオード領域からＩＧＢＴ領域へキャリア流れ込んで境界部にキャリアが集中して素子が破壊されることを抑制する。【解決手段】同一チップ内にＩＧＢＴ領域４とダイオード領域５と配線領域６とを有する半導体装置において、配線領域６は、トレンチゲート電極２０にゲート電位を供給するゲートランナ７と、トレンチ１９よりも不純物の拡散深さが深いウェル層２８と、ウェル層２８とエミッタ電極２１とを電気的に接続する複数の第１のコンタクト領域３３とを有し、ＩＧＢＴ領域４とダイオード領域５との境界部９に近い境界部近傍１０の第１のコンタクト領域３３の面積は、境界部近傍１０よりも遠い位置の第１のコンタクト領域３３の面積よりも大きい。【選択図】図２